Recently, the research team of Liu Ming, a researcher at the Institute of Microelectronics of the Chinese Academy of Sciences' Institute of Microelectronics, has made new progress in the study of the micromechanism of a resistive random access memory (RRAM). RRAM has the advantages of simple structure, high speed, good device scalability, easy 3D integration, etc. It is one of the strong competitors for the next generation of high density non-volatile memory. RRAM devices have two distinct transition modes, volatile and non-volatile, both of which are critical for the development of high-density memory arrays. Studies have shown that, under certain conditions, the conversion between volatile and non-volatile modes of conversion can be achieved in the same device, but the underlying physical mechanism is still not clear. The elucidation of the microscopic mechanisms of these two transition modes is conducive to controlling the transition behavior of RRAM devices, improving the performance of RRAM devices and establishing accurate device models. Researchers Liu Qi and Sun Haitao from the Institute of Microelectronics and other researchers conducted systematic research on the microscopic mechanisms of the above two transition modes and found that in the process of controlling the electric excitation in the solid electrolyte based RRAM device (Ag/SiO2/Pt) By limiting the size of the current, the device can switch between volatile and non-volatile resistive switching modes. The in-situ SEM and TEM observations show that there are significant differences in the microstructure of the conductive pathways formed between the Ag and Pt electrodes in both resistive modes. In the volatile resistance mode, conductive paths formed by discrete Ag nano-crystal chains are formed, and the conductive paths formed in the non-volatile resistive mode consist of continuous Ag nanocrystals. The analysis of the electrical transport mechanism and the characterization of the potential distribution in the conductive paths under different resistance states prove that, unlike the non-volatile resistive mode of the microscopic mechanism, the volatile resistive behavior is mainly caused by the effective tunneling between discrete Ag nanocrystals. The change in the barrier dominates. This work was published in 2014 in Advance Functional Materials (DOI: 10.1002/adfm.201401304) and was selected as the inside cover article. Based on the above research results, the research team used the discrete nanocrystalline particles formed in the oxide solid electrolyte material during the small current limiting excitation process to construct a local self-doped Ag nanocrystalline Ag/SiO2:Ag NC/ Pt structure device, through the design program / erase operation mode, obtained a multi-valued resistive memory with negative differential resistance effect, and verified that it has superior resistive memory performance. The above work was supported by the National Natural Science Foundation of China's Innovative Research Group Fund, the Excellent Youth Fund, and the Ministry of Science and Technology's "973" and "863" projects. The main type of Tape Measure is Steel Tape, followed by fiber tape, which is the tape that everyone often sees. Many people say it is a cloth ruler, and there is also a waist measurement ruler (tailor ruler/clothing ruler belong to this category). In southern China and Hong Kong, the tape measure is usually referred to as a soft ruler or a pull ruler. The material is PVC plastic and glass fiber, which can prevent the tape from being stretched during use. 3M Tape Measure,Vintage Tape Measure,Cheap Tape Measure,Durable Steel Measuring Tape Henan Liangjin Tools Co.,Ltd , https://www.liangjintools.com