De Fraunhofer announces a 24% solar photovoltaic cell

Recently, the Fraunhofer Institute for Solar Energy Systems in Germany announced a new solar photovoltaic cell with 24% conversion efficiency. The entire backside is covered with a passivation layer.

Unlike the P-type silicon used today for most commercial photovoltaic cells, this photovoltaic cell is based on n-type silicon. The Fraunhofer Institute for Solar Energy Systems in Germany claims that phosphorus-doped n-type silicon is a good raw material for photovoltaic cells, but its backside construction is a major obstacle.

Fraunhofer's Tunnel Oxide Passivated Contact (TOPCon) consists of an ultra-thin tunnel oxide layer and a thin layer of silicon material. The researchers said that with this design, they can be passivated with the entire back side of the photovoltaic cell while achieving excellent surface passivation and reducing resistance losses.

It is reported that the research and development of the tunnel-type oxidation passivation layer has been supported by the German Federal Environment Department, the Department of Nature Protection and Nuclear Power Safety (BMU). (Compiled by Tao Shuhua)

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